PBSS4041NX,115
- Description
- 60V 2.5W 6.2A NPN SOT-89-3 Bipolar Transistors - BJT ROHS
- Collector Emitter Saturation Voltage
- 150mV
- Collector Emitter Voltage (VCEO)
- 60V
- Transition Frequency
- 130MHz
- hFE Min
- 75
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
10,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- High Collector Emitter Breakdown Voltage: 60V
- Maximum Collector Current: 6.2A
- Transition Frequency: 130M Hz
- Low Collector Emitter Saturation Voltage: 150mV
- Power Dissipation: 2.5W
- Operating Temperature Range: -55°C to 150°C
The Nexperia 60V 2.5W 6.2A NPN SOT-89-3 Bipolar Transistor is designed for high-performance applications requiring efficient switching and amplification. With a compact SOT-89 package, this transistor delivers reliable operation in various electronic circuits. It features a high collector emitter breakdown voltage of 60V and a maximum collector current of 6.2A, making it suitable for demanding environments. The device is RoHS compliant and lead-free, ensuring it meets modern environmental standards.
The 60V 2.5W 6.2A NPN SOT-89-3 Bipolar Transistor is widely used in various applications such as signal amplification, switching, and motor control. With its high collector current capacity and low saturation voltage, it is ideal for use in consumer electronics, automotive systems, and industrial machinery. Engineers and developers prefer this component for its reliable performance in compact designs.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
10,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.