IRFB5620PBF
- Description
- Trans MOSFET N-CH Si 200V 25A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 200V 25A TO-220AB
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 200V
- Continuous Drain Current (ID)
- 25A
- Drain to Source Resistance
- 72.5mΩ
- Input Capacitance
- 1.71nF
- Max Junction Temperature (Tj)
- 175°C
- Datasheet
Quantity
4,900 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Drain to Source Voltage: 200V
- Continuous Drain Current: 25A
- Low On-State Resistance: 72.5mO
- Fast Switching Times: Rise Time 14.6ns Fall Time 9.9ns
- High Power Dissipation: 144W
- Lead-Free & RoHS Compliant
The Infineon Trans MOSFET N-CH Si 200V 25A is a high-performance electronic component designed for efficient power management in various applications. This MOSFET features a robust TO-220AB package, making it suitable for through-hole mounting in demanding environments. With a maximum drain to source voltage of 200V and a continuous drain current of 25A, it ensures reliable operation in high-power circuits. Its low on-state resistance and fast switching times make it an ideal choice for applications requiring high efficiency and thermal performance.
The Infineon IRFB5620PBF is a 200V Single N-Channel HEXFET Power MOSFET designed for high efficiency power electronics applications. With a continuous drain current of 25A and a low on-state resistance of 72.5mOhm, this MOSFET is ideal for use in digital audio systems, power supplies, motor controls, and other high-power switching circuits. With RoHS compliance and a TO-220AB package, the IRFB5620PBF delivers reliable performance in a variety of applications.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
4,900 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.