BSZ097N04LSGATMA1
- Description
- Power MOSFET, N-Channel, 40 V, 40 A, 0.0081 ohm, PG-TSDSON, Surface Mount
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 40V
- Continuous Drain Current (ID)
- 12A
- Drain to Source Resistance
- 14.2mΩ
- Input Capacitance
- 1.4nF
- Datasheet
Quantity
39,998 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- N-Channel Configuration for Enhanced Efficiency
- Drain to Source Voltage: 40 V
- Continuous Drain Current: 12 A
- On-State Resistance: 9.7 mΩ
- Fast Rise Time: 2.4 ns
- Halogen Free and RoHS Compliant
The Infineon Power MOSFET N-Channel is a high-performance electronic component designed for efficient power management in various applications. With a maximum drain to source voltage of 40 V and a continuous drain current of 12 A, this MOSFET ensures reliable operation in demanding environments. Its compact PQFN package allows for surface mounting, making it an ideal choice for space-constrained designs. The device operates effectively across a wide temperature range, from -55°C to 175°C, ensuring versatility in different applications.
The Power MOSFET is commonly used in power management applications, including DC-DC converters, motor drivers, and power distribution systems. Its low on-state resistance and high current capability make it ideal for efficient switching in various electronic devices. Engineers and designers in the fields of consumer electronics and industrial automation often utilize this component for reliable performance in compact spaces.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
39,998 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.