IRFB4115PBF
- Description
- Single N-Channel 150V 11 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 150V
- Continuous Drain Current (ID)
- 104A
- Drain to Source Resistance
- 11mΩ
- Input Capacitance
- 5.27nF
- Max Junction Temperature (Tj)
- 175°C
- Datasheet
Quantity
60,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- N-channel power MOSFET, 150V Vdss
- 11mΩ on-state resistance (Rds(on))
- 104A continuous drain current
- 380W max power dissipation
- 20V max Vgs, 5V threshold voltage
- TO-220AB through-hole package, RoHS compliant
The Infineon IRFB4115PBF is a single N-channel HEXFET power MOSFET rated at 150V drain-to-source with 11mΩ on-resistance. It handles up to 104A continuous drain current and 380W power dissipation in a through-hole TO-220AB package. The IRFB4115PBF is a high-current power MOSFET from Infineon.
This MOSFET is used as a high-current switch in power conversion, motor drives, and DC-DC stages that demand low conduction losses. Its 150V/104A ratings and low 11mΩ Rds(on) suit inverters, UPS systems, and industrial power supplies. The TO-220AB through-hole package supports heatsinking for high-power designs.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
60,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.