IRLML2502TRPBF

• Single N-Channel MOSFET, 20 V Drain-to-Source and Breakdown Voltage
• Continuous Drain Current 4.2 A, on-Resistance 45 M Ohm Maximum
• Threshold Voltage 1.2 V for Logic-Level Gate drive, 12 V Gate-to-Source Rating
• Switching Times: 7.5 Ns Turn-on delay, 10 Ns rise, 54 Ns Turn-Off delay, 26 Ns Fall
• Input Capacitance 740 pF, Power Dissipation Up to 1.25 W
• 3-Pin SOT-23 (Micro3) Surface-Mount package, 2.794 Mm X 1.397 mm, Tin Plated
• Operating and Junction Temperature to +150 C, RoHS compliant, Tape and Reel of 3, 000
• Lifecycle Status: EOL (end of life)

The Infineon IRLML2502TRPBF is a single N-channel MOSFET in a SOT-23 (Micro3) package, rated for 20 V drain-to-source with a 20 V breakdown voltage and 4.2 A of continuous drain current. On-resistance is 45 m Ohm maximum and the 1.2 V threshold allows direct logic-level gate drive, with gate-to-source rated at 12 V. The device dissipates up to 1.25 W, operates from -55 C to +150 C with a 150 C maximum junction temperature, and is RoHS compliant and lead free. Note that this part carries an EOL lifecycle status.

A logic-level N-channel MOSFET at this rating is used for low-side switching of loads such as relays, solenoids, LEDs, small motors, and fans, and as a general-purpose switch driven directly from a 1.8 V, 3.3 V, or 5 V microcontroller pin. The 45 m Ohm on-resistance keeps conduction loss modest at currents of a few amps in a SOT-23 footprint. Typical users include designers of consumer and appliance electronics, industrial I/O boards, battery-powered products, and automotive accessories. Because this part is EOL, new designs should qualify a replacement while existing builds source remaining inventory.