IKP20N65H5XKSA1
- Description
- Trans IGBT Chip N-CH 650V 42A 125000mW Automotive 3-Pin(3+Tab) TO-220 Tube
- Max Power Dissipation
- 125W
- Datasheet
Quantity
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- High Voltage Rating: 650V
- Max Current Rating: 42A
- Power Dissipation: 125W
- Temperature Range: -40°C to 175°C
- 3-Pin TO-220 Package for Easy Mounting
The Infineon Trans IGBT Chip N-CH 650V 42A 125000mW is a powerful and efficient Insulated Gate Bipolar Transistor designed for automotive applications. This component is optimized for high voltage and current handling, making it ideal for demanding power management tasks. Housed in a robust TO-220 package, it ensures reliable performance in various automotive environments, with a wide operating temperature range and excellent thermal management capabilities.
The Trans IGBT Chip N-CH 650V 42A 125000mW is designed for high-power applications, particularly in automotive systems. With a robust power dissipation capability of 125W and a wide operating temperature range, it is ideal for use in inverter circuits, motor drives, and power control modules. Engineers and designers in the automotive sector utilize this component to enhance energy efficiency and performance in their designs.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.