IS62WV51216BLL-55TLI

Description
1MB x 16 3.3V -40°C~85°C TSOP-44
Memory Technology
CMOS
Data Bus Width
16b
Memory Size
1MB
Access Time
55ns
Datasheet
ISSI IS62WV51216BLL-55TLI product image

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  • 8Mb Density Organised as 512K Words of 16 bits, Equivalent to 1MB of Storage
  • Asynchronous Parallel Interface with a 19-Bit Address Bus and a 16-Bit Data Bus
  • Access Time of 55ns at a Maximum Frequency of 18 Megahertz
  • Operates from 2.5V to 3.6V, 3.3V nominal, Drawing 5mA of Supply Current
  • Low-Power CMOS Single-Port Design in a 44-Pin TSOP Surface-Mount Package
  • Industrial -40°C to 85°C rating, Moisture Sensitivity Level 3, Supplied in 135-Piece Trays

The ISSI IS62WV51216BLL-55TLI is an 8Mb asynchronous CMOS SRAM organised as 512K words of 16 bits, giving 1MB of storage. It has a 55ns access time, operates from 2.5V to 3.6V with a 3.3V nominal supply, and draws 5mA. The IS62WV51216BLL-55TLI uses a parallel interface with a 19-bit address bus and a 16-bit data bus, and is supplied in a 44-pin TSOP package in 135-piece trays, rated from -40°C to 85°C.

SRAM holds each bit in a flip-flop rather than on a capacitor, so unlike DRAM it needs no refresh controller and answers a plain address-and-data bus with no initialisation sequence, which is why asynchronous SRAM remains the simplest way to add memory to a microcontroller or FPGA. At 1MB with a 55ns access time, the IS62WV51216BLL-55TLI serves as buffer and frame memory, as scratchpad for a processor short of internal RAM, and as packet or sample storage in data acquisition. Its industrial temperature range and long production life suit equipment built for years of service: industrial controllers, medical instruments, networking gear, metering, and test equipment. Typical buyers are embedded designers and OEMs sustaining long-lifecycle products.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

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