IS61WV25616BLL-10TLI
- Description
- 256K X 16 High Speed Asynchronous Cmos Static Ram Standard SRAM, 256KX16, 10NS, Cmos, PDSO44
- Memory Technology
- SDR
- Memory Type
- SRAM
- Data Bus Width
- 16b
- Memory Size
- 512kB
- Access Time
- 10ns
- Datasheet
Quantity
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- 4Mb Asynchronous SRAM Organized as 256K X 16
- 10ns Access Time with a 16-Bit Data Bus and 18-Bit Address Bus
- 3.3V Operating Supply Over a 2.4V to 3.6V Range
- 45mA Nominal Supply current, Low-Power CMOS Process
- 44-Pin TSOP Surface-Mount Package
- -40C to 85C Operating range, Lead-Free and RoHS Compliant
The IS61WV25616BLL-10TLI is an ISSI high-speed asynchronous CMOS static RAM organized as 256K x 16, giving 4Mb of total density on a 16-bit data bus with an 18-bit address bus. It has a 10ns access time and runs from a 3.3V supply over a 2.4V to 3.6V range at 45mA nominal. The IS61WV25616BLL-10TLI is supplied in a 44-pin TSOP package rated from -40C to 85C.
Asynchronous SRAM needs no refresh controller and no initialization sequence, so designers use it as fast scratchpad, buffer and frame memory attached directly to a microcontroller, DSP or FPGA bus. Typical uses are packet buffering in networking hardware, image line buffers in machine vision and printing, waveform storage in test equipment, and working memory in industrial and medical controllers. The 10ns access time on the IS61WV25616BLL-10TLI supports zero-wait-state operation on many embedded buses, and the -40C to 85C rating suits industrial deployment.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.