FM25W256-GTR

• 256Kb FRAM Density Organized 32K X 8 (32kB), 8-Bit Word Size
• SPI Serial Interface at Up to 20M Hz, 20ns Access Time
• Non-Volatile with No Write Delay and No Erase Cycle Required
• 2.7V to 5.5V Supply range, 5V nominal, 2mA Nominal Supply Current
• 8-Pin SOIC package, Tin Contact Plating
• -40C to +85C Industrial Operating Temperature Range
• Lead free, RoHS compliant, Tape and Reel Packaging

The FM25W256-GTR is an Infineon 256Kb serial FRAM organized as 32K x 8, with an SPI interface running to 20M Hz and a 20ns access time, supplied in an 8-pin SOIC package. It operates across a wide 2.7V to 5.5V supply range at a 5V nominal rail, draws 2mA, and is rated -40C to +85C. FRAM is a ferroelectric non-volatile memory that writes at bus speed with no erase cycle and no write delay, and offers far higher write endurance than EEPROM or flash, which is what distinguishes it from other serial non-volatile memories. Infineon lists the part at Production lifecycle status, lead free and RoHS compliant on tape and reel.

Serial FRAM is chosen over EEPROM wherever data is written frequently or where a write must survive an unexpected power loss: utility and sub-metering registers, industrial controller and PLC state retention, motor drive and servo parameter logging, medical device event logs, printer and copier consumable tracking, and automotive and telematics data capture. Because a write completes at bus speed rather than after a millisecond-scale programming cycle, a design can commit state on a brownout detect using only the energy stored in the supply decoupling. Buyers are industrial automation and metering OEMs, medical and instrumentation designers, and sourcing teams replacing EEPROM in designs that were hitting endurance limits.