FM24V10-GTR

• 1 Mb F-RAM Density Organized as 128 kB X 8
• I2C Interface at Bus Speeds Up to 3.4 MHz (high-Speed mode)
• 2 V to 3.6 V Supply range; 1 mA Nominal Supply Current
• 450 Ns Access Time
• Ferroelectric RAM Technology: Non-Volatile with RAM-Like Write Behaviour
• 8-Pin SOIC package; -40°C to 85°C, Lead-free, RoHS compliant, Tape and Reel

The Infineon FM24V10-GTR is a 1 Mb ferroelectric RAM (F-RAM) organized as 128 kB x 8 with an I2C interface, supplied in an 8-pin SOIC package. It operates from a 2 V to 3.6 V supply at bus speeds up to 3.4 MHz, with a 450 ns access time and roughly 1 mA of nominal supply current. The FM24V10-GTR is rated for -40°C to 85°C and ships on tape and reel.

F-RAM is non-volatile like EEPROM but writes at bus speed with no program delay and without the limited write-endurance budget that makes EEPROM unsuitable for frequent updates. That difference is the whole reason to specify it: applications that log or update state continuously, such as utility and energy meters, industrial controllers holding machine state, medical devices, black-box event recorders, and automotive electronics, can write on every cycle and still survive the product's lifetime. Because writes complete immediately, data already committed is safe when power is lost, which removes the need for a hold-up capacitor to finish a write. Embedded designers and industrial OEM buyers choose parts like the FM24V10-GTR wherever EEPROM wear-out has been a field failure mode.