SI4946BEY-T1-E3
- Description
- Transistor MOSFET Array Dual N-CH 60V 6.5A 8-Pin SOIC T/R
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 60V
- Continuous Drain Current (ID)
- 6.5A
- Drain to Source Resistance
- 41mO
- Input Capacitance
- 840pF
- Max Junction Temperature (Tj)
- 175°C
- Datasheet
Quantity
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- Dual N-channel MOSFET array (two channels)
- 60V drain-to-source voltage, 6.5A continuous drain current
- Low on-resistance of 41m Ohm (Rds(on) max)
- Gate threshold voltage of 2.4V, Vgs rated to 20V
- 2.4W power dissipation
- 8-pin SOIC package rated to 175C junction temperature
The Vishay SI4946BEY-T1-E3 is a dual N-channel MOSFET array supplied in an 8-pin SOIC surface-mount package. Each channel is rated for a 60V drain-to-source voltage and 6.5A continuous drain current, with a low on-resistance of 41m Ohm. This lead-free, RoHS-compliant device is provided on tape and reel.
The SI4946BEY-T1-E3 is used in load switching, power management, and low-side or high-side drive applications where two independent N-channel MOSFETs are needed in a single compact package. Its 60V rating and low on-resistance suit DC-DC conversion, motor and relay drive, and general switching in industrial and consumer electronics. Power and hardware design engineers typically use dual MOSFET arrays like this to save board space.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.