SI4288DY-T1-GE3
- Description
- Transistor MOSFET Array Dual N-CH 40V 9.2A 8-Pin SOIC T/R
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 40V
- Continuous Drain Current (ID)
- 9.2A
- Drain to Source Resistance
- 20mΩ
- Input Capacitance
- 580pF
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
25,000 AvailableNeed this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
- Dual N-Channel MOSFET Array (2 channels)
- 40 V Drain-to-Source Voltage (Vdss)
- 9.2 A Continuous Drain Current per Channel
- 20 M Ohm on-Resistance (Rds(on) max)
- 8-Pin SO package, Surface mount, Up to 150 C
The Vishay SI4288DY-T1-GE3 is a dual N-channel MOSFET array rated 40 V drain-to-source with 9.2 A continuous drain current per channel. It offers 20 m Ohm on-resistance and is packaged in an 8-pin SO package rated to 150 C. The SI4288DY-T1-GE3 is a production, RoHS-compliant part supplied on tape and reel.
Dual N-channel MOSFETs such as the SI4288DY-T1-GE3 are used as low-side switches, load switches, and synchronous rectifiers in power conversion and load-control circuits. Their dual configuration saves board space in DC-DC converters, motor drivers, and battery-powered systems.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
25,000 AvailableNeed this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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