SI2323DDS-T1-GE3
- Description
- Power MOSFET, P-Channel, 20 V, 5.3 A, 0.039 ohm, SOT-23, Surface Mount
- Gate to Source Voltage (Vgs)
- 8V
- Drain to Source Voltage (Vdss)
- -20V
- Continuous Drain Current (ID)
- -4.1A
- Drain to Source Resistance
- 32mΩ
- Input Capacitance
- 1.16nF
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
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- P-channel power MOSFET, single channel
- -20V drain-to-source voltage (VDSS)
- -4.1A continuous drain current
- Low on-resistance, 39mΩ maximum
- Fast switching: 22ns rise, 11ns fall time
- SOT-23 surface-mount package, up to 150°C junction temperature
The Vishay SI2323DDS-T1-GE3 is a P-channel power MOSFET in a surface-mount SOT-23 package. It is rated for a drain-to-source voltage of -20V with a continuous drain current of -4.1A and a low on-resistance of about 39mΩ maximum. This single-channel device is designed for efficient low-voltage power switching.
The SI2323DDS-T1-GE3 is used for low-voltage power switching, load control, and power management in compact electronic systems. Its low on-resistance and small SOT-23 footprint make it suitable for portable devices, battery-powered circuits, and DC power paths. Power-supply and board-level hardware designers are the typical users.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.